Photosensor Device Based on Few‐Layered WS2 Films
Identifieur interne : 000401 ( Main/Exploration ); précédent : 000400; suivant : 000402Photosensor Device Based on Few‐Layered WS2 Films
Auteurs : Néstor Perea-L Pez [États-Unis] ; Ana Laura Elías [États-Unis] ; Ayse Berkdemir [États-Unis] ; Andres Castro-Beltran [États-Unis] ; Humberto R. Gutiérrez [États-Unis] ; Simin Feng [États-Unis] ; Ruitao Lv [États-Unis] ; Takuya Hayashi [Japon] ; Florentino L Pez-Urías [États-Unis] ; Sujoy Ghosh [États-Unis] ; Baleeswaraiah Muchharla [États-Unis] ; Saikat Talapatra [États-Unis] ; Humberto Terrones [États-Unis] ; Mauricio Terrones [États-Unis, Japon]Source :
- Advanced Functional Materials [ 1616-301X ] ; 2013-11-26.
English descriptors
Abstract
Few‐layered films of WS2, synthesized by chemical vapor deposition on quartz, are successfully used as light sensors. The film samples are structurally characterized by Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and high‐resolution transmission electron microscopy. The produced samples consist of few layered sheets possessing up to 10 layers. UV–visible absorbance spectra reveals absorption peaks at energies of 1.95 and 2.33 eV, consistent with the A and B excitons characteristic of WS2. Current–voltage (I–V) and photoresponse measurements carried out at room temperature are performed by connecting the WS2 layered material with Au/Ti contacts. The photocurrent measurements are carried out using five different laser lines ranging between 457 and 647 nm. The results indicate that the electrical response strongly depends on the photon energy from the excitation lasers. In addition, it is found that the photocurrent varies non‐linearly with the incident power, and the generated photocurrent in the WS2 samples varies as a squared root of the incident power. The excellent response of few‐layered WS2 to detect different photon wavelengths, over a wide range of intensities, makes it a strong candidate for constructing novel optoelectronic devices.
Url:
DOI: 10.1002/adfm.201300760
Affiliations:
- Japon, États-Unis
- Illinois, Kentucky, Pennsylvanie
- University Park (Pennsylvanie)
- Université d'État de Pennsylvanie
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Funct. Mater.</title><idno type="ISSN">1616-301X</idno><idno type="eISSN">1616-3028</idno><imprint><publisher>WILEY‐VCH Verlag</publisher><pubPlace>Weinheim</pubPlace><date type="published" when="2013-11-26">2013-11-26</date><biblScope unit="volume">23</biblScope><biblScope unit="issue">44</biblScope><biblScope unit="page" from="5511">5511</biblScope><biblScope unit="page" to="5517">5517</biblScope></imprint><idno type="ISSN">1616-301X</idno></series><idno type="istex">15CCD06579761C41ABE6EACB3C111440C0DCAB43</idno><idno type="DOI">10.1002/adfm.201300760</idno><idno type="ArticleID">ADFM201300760</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">1616-301X</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>dichalcogenides</term><term>low‐dimensional materials</term><term>photocurrent</term><term>raman spectroscopy</term><term>tungsten</term></keywords></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Few‐layered films of WS2, synthesized by chemical vapor deposition on quartz, are successfully used as light sensors. The film samples are structurally characterized by Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and high‐resolution transmission electron microscopy. The produced samples consist of few layered sheets possessing up to 10 layers. UV–visible absorbance spectra reveals absorption peaks at energies of 1.95 and 2.33 eV, consistent with the A and B excitons characteristic of WS2. Current–voltage (I–V) and photoresponse measurements carried out at room temperature are performed by connecting the WS2 layered material with Au/Ti contacts. The photocurrent measurements are carried out using five different laser lines ranging between 457 and 647 nm. The results indicate that the electrical response strongly depends on the photon energy from the excitation lasers. In addition, it is found that the photocurrent varies non‐linearly with the incident power, and the generated photocurrent in the WS2 samples varies as a squared root of the incident power. The excellent response of few‐layered WS2 to detect different photon wavelengths, over a wide range of intensities, makes it a strong candidate for constructing novel optoelectronic devices.</div></front></TEI><affiliations><list><country><li>Japon</li><li>États-Unis</li></country><region><li>Illinois</li><li>Kentucky</li><li>Pennsylvanie</li></region><settlement><li>University Park (Pennsylvanie)</li></settlement><orgName><li>Université d'État de Pennsylvanie</li></orgName></list><tree><country name="États-Unis"><region name="Pennsylvanie"><name sortKey="Perea Pez, Nestor" sort="Perea Pez, Nestor" uniqKey="Perea Pez N" first="Néstor" last="Perea-L Pez">Néstor Perea-L Pez</name></region><name sortKey="Berkdemir, Ayse" sort="Berkdemir, Ayse" uniqKey="Berkdemir A" first="Ayse" last="Berkdemir">Ayse Berkdemir</name><name sortKey="Castro Eltran, Andres" sort="Castro Eltran, Andres" uniqKey="Castro Eltran A" first="Andres" last="Castro-Beltran">Andres Castro-Beltran</name><name sortKey="Elias, Ana Laura" sort="Elias, Ana Laura" uniqKey="Elias A" first="Ana Laura" last="Elías">Ana Laura Elías</name><name sortKey="Feng, Simin" sort="Feng, Simin" uniqKey="Feng S" first="Simin" last="Feng">Simin Feng</name><name sortKey="Ghosh, Sujoy" sort="Ghosh, Sujoy" uniqKey="Ghosh S" first="Sujoy" last="Ghosh">Sujoy Ghosh</name><name sortKey="Gutierrez, Humberto R" sort="Gutierrez, Humberto R" uniqKey="Gutierrez H" first="Humberto R." last="Gutiérrez">Humberto R. Gutiérrez</name><name sortKey="L Pez Rias, Florentino" sort="L Pez Rias, Florentino" uniqKey="L Pez Rias F" first="Florentino" last="L Pez-Urías">Florentino L Pez-Urías</name><name sortKey="Lv, Ruitao" sort="Lv, Ruitao" uniqKey="Lv R" first="Ruitao" last="Lv">Ruitao Lv</name><name sortKey="Muchharla, Baleeswaraiah" sort="Muchharla, Baleeswaraiah" uniqKey="Muchharla B" first="Baleeswaraiah" last="Muchharla">Baleeswaraiah Muchharla</name><name sortKey="Talapatra, Saikat" sort="Talapatra, Saikat" uniqKey="Talapatra S" first="Saikat" last="Talapatra">Saikat Talapatra</name><name sortKey="Terrones, Humberto" sort="Terrones, Humberto" uniqKey="Terrones H" first="Humberto" last="Terrones">Humberto Terrones</name><name sortKey="Terrones, Mauricio" sort="Terrones, Mauricio" uniqKey="Terrones M" first="Mauricio" last="Terrones">Mauricio Terrones</name><name sortKey="Terrones, Mauricio" sort="Terrones, Mauricio" uniqKey="Terrones M" first="Mauricio" last="Terrones">Mauricio Terrones</name></country><country name="Japon"><noRegion><name sortKey="Hayashi, Takuya" sort="Hayashi, Takuya" uniqKey="Hayashi T" first="Takuya" last="Hayashi">Takuya Hayashi</name></noRegion><name sortKey="Terrones, Mauricio" sort="Terrones, Mauricio" uniqKey="Terrones M" first="Mauricio" last="Terrones">Mauricio Terrones</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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